Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

ABSTRACT

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2011-224369, filed on Oct. 11,2011; the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor lightemitting device and a method for manufacturing the semiconductor lightemitting device.

BACKGROUND

In a semiconductor light emitting device such as an LED (Light EmittingDiode) and the like, a configuration is used in which silver (Ag) havinghigh reflectance is used as an electrode to increase the lightextraction efficiency. However, in the case where Ag is used, migrationoccurs easily; stable characteristics are difficult to obtain; and thereliability is low.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to afirst embodiment;

FIG. 2 is a schematic see-through plan view illustrating theconfiguration of the semiconductor light emitting device according tothe first embodiment;

FIG. 3 is a schematic cross-sectional view illustrating theconfiguration of a portion of the semiconductor light emitting deviceaccording to the first embodiment;

FIG. 4 is a flowchart illustrating a method for manufacturing thesemiconductor light emitting device according to the first embodiment;

FIG. 5A to FIG. 5E are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the semiconductorlight emitting device according to the first embodiment;

FIG. 6 is a graph illustrating characteristics of the semiconductorlight emitting device;

FIG. 7 is a schematic cross-sectional view illustrating theconfiguration of another semiconductor light emitting device accordingto the first embodiment;

FIG. 8 is a schematic see-through plan view illustrating theconfiguration of this semiconductor light emitting device according tothe first embodiment;

FIG. 9 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to asecond embodiment; and

FIG. 10 is a schematic cross-sectional view illustrating theconfiguration of another semiconductor light emitting device accordingto the second embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor light emitting deviceincludes a first semiconductor layer, a light emitting unit, a secondsemiconductor layer, a reflecting electrode, an oxide layer and anitrogen-containing layer. The first semiconductor layer is of a firstconductivity type. The light emitting unit is provided on the firstsemiconductor layer. The second semiconductor layer is provided on thelight emitting unit and is of a second conductivity type. The reflectingelectrode is provided on the second semiconductor layer and includes Ag.The oxide layer is provided on the reflecting electrode. The oxide layeris insulative and has a first opening. The nitrogen-containing layer isprovided on the oxide layer. The nitrogen-containing layer is insulativeand has a second opening communicating with the first opening.

According to another embodiment, a semiconductor light emitting deviceincludes a first semiconductor layer, a light emitting unit, a secondsemiconductor layer, a reflecting electrode, an oxide layer, and anitrogen-containing layer. The first semiconductor layer is of a firstconductivity type. The light emitting unit is provided on the firstsemiconductor layer. The second semiconductor layer is provided on thelight emitting unit and is of a second conductivity type. The reflectingelectrode is provided on the second semiconductor layer, and thereflecting electrode includes Ag. The oxide layer is provided on thereflecting electrode. The oxide layer is conductive. Thenitrogen-containing layer is provided on the oxide layer. Thenitrogen-containing layer is conductive.

According to another embodiment, a method is disclosed for manufacturinga semiconductor light emitting device. The method can include forming areflecting electrode including Ag on a second semiconductor layer of astacked body. The stacked body includes a first semiconductor layer of afirst conductivity type, a light emitting unit provided on the firstsemiconductor layer, and the second semiconductor layer of a secondconductivity type provided on the light emitting unit. The method caninclude forming an oxide layer on the reflecting electrode. The methodcan include performing heat treatment of a processing body including thestacked body, the reflecting electrode, and the oxide layer in anatmosphere including oxygen. In addition, the method can include forminga nitrogen-containing layer on the heat-treated oxide layer.

Various embodiments will be described hereinafter with reference to theaccompanying drawings.

The drawings are schematic or conceptual; and the relationships betweenthe thicknesses and the widths of portions, the proportions of sizesamong portions, and the like are not necessarily the same as the actualvalues thereof. Further, the dimensions and the proportions may beillustrated differently among the drawings, even for identical portions.

In the specification and the drawings of the application, componentssimilar to those described in regard to a drawing thereinabove aremarked with like reference numerals, and a detailed description isomitted as appropriate.

First Embodiment

FIG. 1 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to afirst embodiment. FIG. 2 is a schematic see-through plan viewillustrating the configuration of the semiconductor light emittingdevice according to the first embodiment.

FIG. 1 is a cross-sectional view along line A1-A2 of FIG. 2.

As illustrated in FIG. 1 and FIG. 2, the semiconductor light emittingdevice 110 according to the embodiment includes a first semiconductorlayer 10, a light emitting unit 30, a second semiconductor layer 20, areflecting electrode 40, an oxide layer 41, and a nitrogen-containinglayer 42.

The first semiconductor layer 10 has a first conductivity type. Thelight emitting unit 30 is provided on the first semiconductor layer 10.The second semiconductor layer 20 is provided on the light emitting unit30. The second semiconductor layer 20 has a second conductivity typedifferent from the first conductivity type. For example, the firstconductivity type is an n-type; and the second conductivity type is ap-type. However, the embodiment is not limited thereto. The firstconductivity type may be the p-type; and the second conductivity typemay be the n-type. Hereinbelow, the case is described where the firstconductivity type is the n-type and the second conductivity type is thep-type.

Herein, a direction from the first semiconductor layer 10 toward thesecond semiconductor layer 20 is taken as a Z-axis direction. Onedirection perpendicular to the Z-axis direction is taken as an X-axisdirection. A direction perpendicular to the Z-axis direction and theX-axis direction is taken as a Y-axis direction. The Z-axis direction isthe stacking direction of the first semiconductor layer 10, the lightemitting unit 30, and the second semiconductor layer 20. The firstsemiconductor layer 10, the light emitting unit 30, and the secondsemiconductor layer 20 are included in a stacked body 15.

The reflecting electrode 40 is provided on the second semiconductorlayer 20. The reflecting electrode 40 includes silver (Ag).

The oxide layer 41 is provided on the reflecting electrode 40. In thisexample, the oxide layer 41 is insulative and has a first opening 41 h.As described below, the oxide layer 41 may be conductive. The firstopening 41 h may not be provided in the case where the oxide layer 41 isconductive.

The nitrogen-containing layer 42 is provided on the oxide layer 41. Inthis example, the nitrogen-containing layer 42 is insulative and has asecond opening 42 h. At least a portion of the second opening 42 hcommunicates with the first opening 41 h. As described below, thenitrogen-containing layer 42 may be conductive. The second opening 42 hmay not be provided in the case where the nitrogen-containing layer 42is conductive.

For example, the surface area of the portion of the reflecting electrode40 exposed at the first opening 41 h of the oxide layer 41 and thesecond opening 42 h of the nitrogen-containing layer 42 is less than thesurface area of the portion of the reflecting electrode 40 covered withthe oxide layer 41 in the case where the oxide layer 41 has the firstopening 41 h and the nitrogen-containing layer 42 has the second opening42 h.

In the case where the oxide layer 41 is insulative, the oxide layer 41may include an oxide of at least one selected from Si, Ge, Ti, Zr, Hf,Ce, Y, and La. For example, SiO₂ may be used as the oxide layer 41.

In the case where the nitrogen-containing layer 42 is insulative, thenitrogen-containing layer 42 may include a nitride or an oxynitride ofat least one selected from Si, Ge, Ti, Zr, Hf, and Ce. For example,Si₃N₄ may be used as the nitrogen-containing layer 42. SiON may be usedas the nitrogen-containing layer 42.

In this example as illustrated in FIG. 1, the semiconductor lightemitting device 110 further includes a first semiconductor-layer sideelectrode 35. The second semiconductor layer 20 is disposed between thefirst semiconductor-layer side electrode 35 and the reflecting electrode40. The light emitting unit 30 is disposed between the secondsemiconductor layer 20 and the first semiconductor-layer side electrode35. The first semiconductor layer 10 is disposed between the lightemitting unit 30 and the first semiconductor-layer side electrode 35.

A metal layer 50 also is provided. At least a portion of the metal layer50 is provided inside the first opening 41 h and the second opening 42h. For example, the metal layer 50 covers at least a portion of thenitrogen-containing layer 42. The metal layer 50 is electricallyconnected to the reflecting electrode 40 via the first opening 41 h andthe second opening 42 h. The metal layer 50 may include, for example, astacked film that includes a Ti film contacting the reflecting electrode40, a Pt film provided on the Ti film, and a Au film provided on the Ptfilm. At least a portion of the metal layer 50 is provided inside thefirst opening 41 h and the second opening 42 h. The metal layer 50 iselectrically connected to the reflecting electrode 40 via the firstopening 41 h and the second opening 42 h.

In this example, a support substrate 60 and a bonding layer 61 areprovided. The metal layer 50 is disposed between the support substrate60 and the reflecting electrode 40. The bonding layer 61 is disposedbetween the support substrate 60 and the metal layer 50. The supportsubstrate 60 may include, for example, a silicon substrate. The bondinglayer 61 may include, for example, a Au—Sn alloy.

For example, crystal growth of the first semiconductor layer 10, thelight emitting unit 30, and the second semiconductor layer 20 isperformed sequentially on a not-illustrated crystal growth substrate.The reflecting electrode 40, the oxide layer 41, and thenitrogen-containing layer 42 are formed on the second semiconductorlayer 20. The metal layer 50 is formed on the nitrogen-containing layer42. Subsequently, the crystal growth substrate is removed; and the firstsemiconductor-layer side electrode 35 is formed on the exposed firstsemiconductor layer 10. The metal layer 50 and the bonding layer 61 arebonded. Thereby, the semiconductor light emitting device 110 isobtained.

As illustrated in FIG. 2, multiple first openings 41 h and multiplesecond openings 42 h may be provided. In this example, four of theseopenings are provided. The second opening 42 h communicates with thereflecting electrode 40 via the first opening 41 h at each of openingsh1, h2, h3, and h4.

Light is emitted from the light emitting unit 30 by applying a voltageto the metal layer 50 and the first semiconductor-layer side electrode35. The light emitted from the light emitting unit 30 is reflected bythe reflecting electrode 40 and is emitted to the outside mainly fromthe surface on the first semiconductor layer 10 side.

The first semiconductor layer 10 may include, for example, an n-type GaNlayer. The second semiconductor layer 20 may include, for example, ap-type GaN layer.

FIG. 3 is a schematic cross-sectional view illustrating theconfiguration of a portion of the semiconductor light emitting deviceaccording to the first embodiment.

In the semiconductor light emitting device 110 according to theembodiment as illustrated in FIG. 3, the light emitting unit 30 includesmultiple barrier layers 31 and a well layer 32 provided between themultiple barrier layers 31. Although two well layers 32 are illustratedin this example, the number of the well layers 32 may be one, three, ormore. In other words, the light emitting unit 30 may have a SQW(Single-Quantum Well) structure or a MQW (Multi-Quantum Well) structure.

In this example, an intermediate layer is provided between the barrierlayer 31 and the well layer 32. For example, a first intermediate layer33 is provided between the well layer 32 and the barrier layer 31 on thefirst semiconductor layer 10 side as viewed from the well layer 32. Asecond intermediate layer 34 is provided between the well layer 32 andthe barrier layer 31 on the second semiconductor layer 20 side as viewedfrom the well layer 32.

The barrier layer 31 may include, for example,In_(xb)Al_(yb)Ga_(1-xb-yb)N (0<xb<1 and 0<yb<1). The barrier layer 31may include, for example, In_(0.02)Al_(0.33)Ga_(0.65)N. The thickness ofthe barrier layer 31 is, for example, 12.5 nanometers (nm).

The first intermediate layer 33 may include, for example,In_(x1)Ga_(1-x1)N (0<x1<1). The first intermediate layer 33 may include,for example, In_(0.02)Ga_(0.98)N. The thickness of the firstintermediate layer 33 is, for example, 0.5 nm.

The well layer 32 may include, for example, In_(x0)Ga_(1-x0)N (0<x0<1).The well layer 32 may include, for example, In_(0.15)Ga_(0.85)N. Thethickness of the well layer 32 is, for example, 2.5 nm.

The second intermediate layer 34 may include, for example,In_(x2)Ga_(1-x2)N (0<x2<1). The second intermediate layer 34 mayinclude, for example, In_(0.02)Ga_(0.98)N. The thickness of the secondintermediate layer 34 is, for example, 0.5 nm.

The first intermediate layer 33 and the second intermediate layer 34 maybe provided if necessary and may be omitted. In the case where multiplebarrier layers 31 are provided, at least one selected from thecomposition and the thickness may be different between the multiplebarrier layers 31. In the case where multiple well layers 32 areprovided, at least one selected from the composition and the thicknessmay be different between the multiple well layers 32.

As recited above, the first semiconductor layer 10, the light emittingunit 30, and the second semiconductor layer 20 include a nitridesemiconductor. The peak wavelength of the light emitted from the lightemitting unit 30 is not less than 410 nm and not more than 700 nm. Inparticular, a high light extraction efficiency is obtained by using Agas the reflecting electrode for a semiconductor light emitting devicethat emits light of ultraviolet to blue.

An example of a method for manufacturing the semiconductor lightemitting device 110 will now be described.

FIG. 4 is a flowchart illustrating the method for manufacturing thesemiconductor light emitting device according to the first embodiment.

FIG. 5A to FIG. 5E are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the semiconductorlight emitting device according to the first embodiment.

As illustrated in FIG. 4, the reflecting electrode 40 including Ag isformed on the second semiconductor layer 20 of the stacked body 15 thatincludes the first semiconductor layer 10, the light emitting unit 30,and the second semiconductor layer 20 (step S110).

For example, as illustrated in FIG. 5A, the nitride semiconductor layersused to form the stacked body 15 are sequentially deposited on a crystalgrowth substrate 5 of sapphire using, for example, metal organicchemical vapor deposition (MOCVD). For example, a buffer layer 6 isformed on the sapphire crystal growth substrate 5; and an n-type GaNlayer used to form the first semiconductor layer 10 is formed on thebuffer layer 6. The light emitting unit 30 is formed on the n-type GaNlayer. A p-type GaN layer used to form the second semiconductor layer 20is formed on the light emitting unit 30. Then, a Ag layer used to formthe reflecting electrode 40 is formed on the p-type GaN layer.

In this manufacturing method as illustrated in FIG. 4 and FIG. 5B, theoxide layer 41 is formed on the reflecting electrode 40 (step S120). Forexample, a SiO₂ film used to form the oxide layer 41 is formed, forexample, on the reflecting electrode 40. The formation of the SiO₂ filmmay include, for example, vacuum vapor deposition, sputtering, and thelike.

As illustrated in FIG. 4 and FIG. 5C, heat treatment of a processingbody including the stacked body 15, the reflecting electrode 40, and theoxide layer 41 is performed in an atmosphere including oxygen (stepS130). For example, annealing is performed in an oxygen atmosphere at atemperature not less than 200° C. and not more than 500° C. For example,sintering is performed in an oxygen atmosphere. At this time, asillustrated in FIG. 5C, oxygen 7 reaches the reflecting electrode 40 viathe oxide layer 41. An ohmic contact is formed between the reflectingelectrode 40 and the second semiconductor layer 20 (the p-type GaNlayer).

Then, as illustrated in FIG. 4 and FIG. 5D, the nitrogen-containinglayer 42 is formed on the heat-treated oxide layer 41 (step S140). Forexample, a Si₃N₄ film is formed as the nitrogen-containing layer 42. Thenitrogen-containing layer 42 is formed to cover the oxide layer 41. Inthe embodiment, the nitrogen-containing layer 42 may be formed bynitriding the surface portion of the layer used to form the oxide layer41.

In the case where the oxide layer 41 and the nitrogen-containing layer42 are insulative, the first opening 41 h and the second opening 42 hare made.

In other words, as illustrated in FIG. 4 and FIG. 5E, the oxide layer 41and the nitrogen-containing layer 42 are patterned (step S150). Thispatterning may include, for example, photolithography and etching.

Then, as illustrated in FIG. 4, the metal layer 50 is formed toelectrically contact the reflecting electrode 40 at the portions fromwhich the oxide layer 41 and the nitrogen-containing layer 42 areremoved (the first opening 41 h and the second opening 42 h) by thepatterning of the oxide layer 41 and the nitrogen-containing layer 42(step S160). For example, a stacked film of a Ti film/Pt film/Au film,which is used to form the metal layer 50, is formed.

For example, a Si substrate that is used to form the support substrate60 is prepared. A Au—Sn layer used to form the bonding layer 61 isformed on the major surface of the support substrate 60. The metal layer50 of the processing body recited above is caused to oppose the bondinglayer 61. For example, the metal layer 50 and the bonding layer 61 arebonded by applying pressure to these substrates at a high temperaturenot less than 250° C. (step S170).

Then, the crystal growth substrate 5 is peeled from the stacked body 15using pulse irradiation of a UV (Ultra-Violet) laser (e.g., a KrF laserhaving a wavelength of 248 nm) from the crystal growth substrate 5 side(step S180).

The stacked body 15 is separated into devices by patterning the stackedbody 15 using lithography and etching. At this time, the metal layer 50is not patterned and is exposed between the stacked bodies 15 that areseparated into the devices. The patterned stacked bodies 15 have mesaconfigurations in which the side surfaces are tilted in taperedconfigurations. In other words, the width of the first semiconductorlayer 10 in a direction perpendicular to the Z-axis direction isnarrower than the width of the second semiconductor layer 20 in thedirection perpendicular to the Z-axis direction. For example, thesurface area of the film surface increases continuously from the firstsemiconductor layer 10 toward the second semiconductor layer 20.

Then, a protective layer (not illustrated in FIG. 1) is formed to coverthe surfaces of the stacked bodies 15 and the metal layer 50. Forexample, a SiO₂ film is formed as the protective layer. Then, theprotective layer covering the upper surfaces of the stacked bodies 15 isremoved. At this time, the protective layer remains on the outer edgeportions of the upper surfaces of the stacked bodies 15 (the surfaces onthe first semiconductor layer 10 side). Thereby, the upper surfaces ofthe stacked bodies 15 are exposed except at the outer edge portions.

Wet etching of the upper surfaces of the stacked bodies 15 is performed.For example, etching is performed using potassium hydroxide with aconcentration of 1 mol/l and a temperature of 70° C. for 15 minutes. Theupper surfaces of the stacked bodies 15 are surface-roughened. Then, thefirst semiconductor-layer side electrode 35 is formed on the uppersurfaces of the stacked bodies 15. It is favorable for the firstsemiconductor-layer side electrode 35 to include a material having highalkali tolerance. It is favorable for the first semiconductor-layer sideelectrode 35 to include, for example, a material including a metalselected from Pt, Au, Ni, and Ti.

Using the methods recited above, the semiconductor light emitting device110 can be formed. The semiconductor light emitting device 110 is a thinfilm (TF) semiconductor light emitting device from which the crystalgrowth substrate 5 is removed.

In the semiconductor light emitting device 110 according to theembodiment, Ag, which has a high reflectance, is used as the electrodeprovided on the second semiconductor layer 20. Contact between the Agelectrode and the p-type GaN layer cannot be obtained only by formingthe Ag electrode on the p-type GaN layer. According to investigations ofthe inventor of the application, the contact resistance between the Agelectrode and the p-type GaN layer is reduced by performing heattreatment after forming the Ag electrode on the p-type GaN layer. Insuch a case, the atmosphere of the heat treatment affects the contactresistance.

FIG. 6 is a graph illustrating characteristics of the semiconductorlight emitting device.

FIG. 6 illustrates the measurement results of the contact resistancebetween the p-type GaN layer and the Ag layer when the reflectingelectrode 40 (the Ag layer) is formed on the second semiconductor layer20 (the p-type GaN layer) and heat treatment is performed subsequentlyin nitrogen and in oxygen. The horizontal axis of FIG. 6 is atemperature T (° C.) of the heat treatment; and the vertical axis ofFIG. 6 is a contact resistance Rc (Ωcm²). In FIG. 6, the triangularsymbols correspond to the heat treatment in nitrogen; and the roundsymbols correspond to the heat treatment in oxygen.

It can be seen from FIG. 6 that the contact resistance Rc is high forthe heat treatment in nitrogen (the triangular symbols). Conversely, thecontact resistance is low for the heat treatment in oxygen (the roundsymbols). Thus, heat treatment in an atmosphere including oxygen iseffective to obtain a low contact resistance Rc.

However, in the case where heat treatment in oxygen is performed on theAg layer formed on the p-type GaN layer, migration of the Ag occurs; andstable characteristics cannot be obtained.

It is conceivable to form another metal layer on the Ag layer tosuppress the migration. However, for example, in a configuration inwhich a Pt layer, a Rh layer, a Ni layer, or an Al layer is formed onthe Ag layer, it was learned that the operating voltage Vf of thesemiconductor light emitting device increases; and the light outputdecreases easily.

By analyses of the inventor of the application, it was learned that, forexample, the light emission intensity is lower at the central portion ofthe reflecting electrode 40 than at the peripheral portion for aconfiguration in which a Ni layer is formed on the Ag layer of thereflecting electrode 40. It is conceivable that this is because Ni doesnot transmit oxygen. In other words, it is conceivable that at theperipheral portion, the contact resistance Rc between the p-type GaNlayer and the Ag layer decreases because oxygen is supplied to the Aglayer via the end surface of the Ag layer; while at the central portion,the contact resistance Rc does not decrease sufficiently because oxygenis not supplied to the Ag layer. In other words, ohmic contact isobtained only at the circumferential edge portion of the reflectingelectrode 40; and ohmic contact is not obtained at the central portionof the reflecting electrode 40. Therefore, the operating voltage Vfincreases because a uniform current cannot be injected. Then, theobtained light output also decreases. In other words, the luminousefficiency is low. Also, by analyzing a sample in which a Ni layer wasformed on the Ag layer, a phenomenon was observed in which the Nielement diffused into the interface between the Ag layer and the p-typeGaN layer.

Thus, the operating voltage Vf increases and the light output easilydecreases in a configuration in which another metal layer is formed onthe Ag layer to suppress the migration.

In the embodiment, the heat treatment is performed in the state in whichthe oxide layer 41 is formed on the reflecting electrode 40 (the Aglayer). In such a case, a low contact resistance is obtained byperforming the heat treatment in the oxygen atmosphere. Then, the oxygencan be supplied uniformly to the Ag layer because the oxide layer 41transmits the oxygen. Thereby, a uniform and low contact resistance Rcis obtained inside the surface of the reflecting electrode 40. Thereby,the increase of the operating voltage Vf and the decrease of the lightoutput can be suppressed. Further, the migration of the Ag is suppressedduring and after the heat treatment because the reflecting electrode 40is substantially covered with the oxide layer 41.

The reliability decreases easily in a configuration in which only theoxide layer 41 is provided on the reflecting electrode 40 of Ag. Inother words, the oxide layer 41 easily transmits impurities such asmoisture and the like. For example, the migration of the Ag occurseasily in the case where water reaches the Ag layer via the oxide layer41. For example, sulfides of the Ag occur and the desiredcharacteristics are not obtained in the case where sulfur (S) reachesthe Ag layer via the oxide layer 41. Other elements included in themetal layer 50 and the bonding layer 61 easily diffuse via the oxidelayer 41 to the interface between the Ag layer and the p-type GaN layer.

In the embodiment, a two-layer configuration including the oxide layer41 provided on the reflecting electrode 40 of Ag and thenitrogen-containing layer 42 provided on the oxide layer 41 is employed.By providing the nitrogen-containing layer 42 on the oxide layer 41, themigration due to the penetration of water, the occurrence of sulfides,and the diffusion of other elements to the interface between the Aglayer and the p-type GaN layer can be suppressed.

Thus, in the embodiment, a low and uniform contact resistance isobtained by performing the heat treatment via the oxide layer 41 in theoxygen atmosphere. Simultaneously, various degradation caused byimpurities and the like from the outside can be suppressed by thenitrogen-containing layer 42. In the embodiment, a configuration isemployed in which the oxide layer 41 can be formed on the Ag layerinstead of forming a metal which diffuses easily; and the heat treatmentcan be performed via the oxide layer 41. Thereby, a uniform lightemission distribution can be obtained at a low operating voltage. Highreliability is realized by further providing the nitrogen-containinglayer 42.

For example, the thickness of the oxide layer 41 is not less than 1nanometers (nm) and not more than 100 nm. The suppression effect of themigration of the Ag decreases in the case where the thickness of theoxide layer 41 is thinner than 1 nm. There are cases where thetransmissivity of the oxygen decreases and the contact resistance Rcdoes not decrease sufficiently when the thickness of the oxide layer 41is thicker than 100 nm.

For example, the thickness of the nitrogen-containing layer 42 is notless than 1 nm and not more than 10 nm. The blocking effect with respectto the impurities such as the water, etc., decreases in the case wherethe thickness of the nitrogen-containing layer 42 is thinner than 1 nm.The patterning to make the openings becomes difficult in the case wherethe thickness of the nitrogen-containing layer 42 is thicker than 10 nm.

For example, in a configuration in which a nitrogen-containing layer (aSi₃N₄ film and the like) is directly formed on the Ag layer withoutforming the oxide layer 41, it is difficult to obtain a low contactresistance because sufficient oxygen is not supplied to the Ag layer.Similarly, even in a configuration in which the nitrogen-containinglayer 42 is formed on the Ag layer and the oxide layer 41 is formed onthe nitrogen-containing layer 42, it is difficult to obtain a lowcontact resistance because sufficient oxygen is not supplied to the Aglayer.

In other words, it is difficult to obtain a semiconductor light emittingdevice including an electrode formed using silver that has highperformance and high reliability in the cases of the configuration inwhich only the oxide layer 41 is formed on the Ag layer, theconfiguration in which only the nitrogen-containing layer 42 is formedon the Ag layer, and the configuration in which the nitrogen-containinglayer 42 is formed on the Ag layer and the oxide layer 41 is formed onthe nitrogen-containing layer 42 (where the stacking order is thereverse of that of the embodiment). Conversely, in the embodiment inwhich the oxide layer 41 is provided on the Ag layer and thenitrogen-containing layer 42 is provided on the oxide layer 41, asemiconductor light emitting device including an electrode formed usingsilver that has high performance and high reliability can be obtained.

The heat treatment is performed in the atmosphere including oxygen afterforming the oxide layer 41 and prior to the forming of thenitrogen-containing layer 42 because the oxygen is blocked by thenitrogen-containing layer 42 in the case where the heat treatment isperformed in oxygen in the state in which the nitrogen-containing layer42 is formed on the oxide layer 41 which is formed on the Ag layer. Inthe embodiment, for example, much hydrogen is included in thenitrogen-containing layer 42 in the case where the nitrogen-containinglayer 42 (e.g., the Si₃N₄) is formed using CVD (Chemical VaporDeposition). Such hydrogen acts to inactivate the p-type GaN layer. Forexample, there is a possibility that the hydrogen inside thenitrogen-containing layer 42 may have a negative effect on the p-typeGaN layer in the configuration in which the nitrogen-containing layer 42is directly formed on the Ag layer. In such a case, in the embodiment,the negative effect of the hydrogen on the p-type GaN layer also may besuppressed by interposing the oxide layer 41 between thenitrogen-containing layer 42 and the Ag layer.

In the embodiment, the type of the metallic element included in thenitrogen-containing layer 42 may be the same as the type of the metallicelement included in the oxide layer 41. For example, in the case whereSiO₂ is used as the oxide layer 41, Si₃N₄ is used as thenitrogen-containing layer 42. Thereby, there are fewer interface defectsat the interface between the oxide layer 41 and the nitrogen-containinglayer 42. For example, the occurrence of local current leakage can besuppressed. Thereby, for example, a nonuniform light emission caused bylocal leakage can be suppressed; and the luminous efficiency can beincreased.

In the case where the oxide layer 41 and the nitrogen-containing layer42 are insulative, the first opening 41 h is provided in the oxide layer41 and the second opening 42 h is provided in the nitrogen-containinglayer 42 to obtain an electrical connection to the reflecting electrode40.

In the case where the widths of the first opening 41 h and the secondopening 42 h (the lengths along a direction perpendicular to the Z-axisdirection) are excessively large, the degree of the suppression of themigration of the Ag of the reflecting electrode 40 decreases. By settingthe surface area of the portion of the reflecting electrode 40 exposedat the first opening 41 h and the second opening 42 h to be less thanthe surface area of the portion of the reflecting electrode 40 coveredwith the oxide layer 41, the migration of the Ag can be effectivelysuppressed.

For example, there are cases where a protective layer such as a SiO₂film and the like is formed on the side surfaces and the like of thestacked body 15; and a configuration is conceivable in which such aprotective layer is provided also on a portion of the circumferentialedge portion of the reflecting electrode 40 of the Ag. However, in sucha configuration, it is difficult to suppress the migration of the Ag ofthe reflecting electrode 40 because the protective layer is providedonly on a portion of the circumferential edge portion of the reflectingelectrode 40.

In the embodiment, the migration of the Ag can be effectively suppressedby covering not less than half of the surface area of the reflectingelectrode 40 of the Ag with the oxide layer 41.

On the other hand, the resistance of the electrical connection of thereflecting electrode 40 (e.g., the resistance between the reflectingelectrode 40 and the metal layer 50) has a tendency to increase in thecase where the widths of the first opening 41 h and the second opening42 h are excessively small. However, in a practical configuration, theincrease of the resistance is substantially not a problem. For example,the resistance between the reflecting electrode 40 and the metal layer50 can be practically reduced enough by setting the widths of the firstopening 41 h and the second opening 42 h to be not less than about 1micrometers (μm).

Because the conductivity of Ag is sufficiently high, the current spreadssufficiently in the lateral direction (the direction perpendicular tothe Z axis) inside the Ag layer. For example, in calculations regardingthe case where the first opening 41 h and the second opening 42 h areprovided with widths of 1 μm, the current spreads to a distance of 0.5mm from the first opening 41 h and the second opening 42 h. Accordingly,a uniform light emission is obtained for substantially the entiresurface of the semiconductor light emitting device by providing onefirst opening 41 h and one second opening 42 h in, for example, asemiconductor light emitting device having sides of about 0.5 mm.

In calculations regarding the case where the first opening 41 h and thesecond opening 42 h are provided with widths of about 1 μm when aninsulative oxide layer 41 and an insulative nitrogen-containing layer 42are provided, the increase of the operating voltage Vf is about 0.05millivolts (mV); and the operating voltage Vf substantially does notincrease.

In the example of the method for manufacturing the semiconductor lightemitting device 110 described in regard to FIG. 4, heat treatment of theprocessing body including the stacked body 15, the reflecting electrode40, and the oxide layer 41 may further be performed at reduced pressureor in a nitrogen atmosphere prior to the heat treatment in theatmosphere including oxygen (step S130). For example, the heat treatmentin the oxygen atmosphere is performed after the heat treatment in thenitrogen atmosphere. By performing the heat treatment in the nitrogenatmosphere, for example, the adhesion strength of the reflectingelectrode 40 to the stacked body 15 improves. Also, the adhesionstrength of the oxide layer 41 to the reflecting electrode 40 improves.Thereby, higher reliability is obtained.

In the case where the oxide layer 41 includes an oxide of at least oneselected from Si, Ge, Hf, and Zr in the method for manufacturing thesemiconductor light emitting device according to the embodiment, thefirst opening 41 h and the second opening 42 h are made such that thesurface area of the portion of the reflecting electrode 40 exposed atthe first opening 41 h and the second opening 42 h is less than thesurface area of the portion of the reflecting electrode 40 covered withthe oxide layer 41.

FIG. 7 is a schematic cross-sectional view illustrating theconfiguration of another semiconductor light emitting device accordingto the first embodiment.

FIG. 8 is a schematic see-through plan view illustrating theconfiguration of this semiconductor light emitting device according tothe first embodiment.

FIG. 7 is a cross-sectional view along line A1-A2 of FIG. 8.

As illustrated in FIG. 1 and FIG. 2, the semiconductor light emittingdevice 111 according to the embodiment also includes the firstsemiconductor layer 10, the light emitting unit 30, the secondsemiconductor layer 20, the reflecting electrode 40, the oxide layer 41,and the nitrogen-containing layer 42. The light emitting unit 30 isprovided on a portion of the first semiconductor layer 10; and thesecond semiconductor layer 20 is provided on the light emitting unit 30.The semiconductor light emitting device 111 further includes the crystalgrowth substrate 5 and the buffer layer 6. The crystal growth substrate5 may include, for example, various materials such as sapphire, GaN,SiC, Si, GaAs, and the like. The buffer layer 6 may include a nitridesemiconductor. The buffer layer 6 is provided on the crystal growthsubstrate 5; and the first semiconductor layer 10, the light emittingunit 30, and the second semiconductor layer 20 are provided on thebuffer layer 6.

In this case as well, the reflecting electrode 40 including Ag isprovided on the second semiconductor layer 20. The oxide layer 41 thatis insulative and has the first opening 41 h is provided on thereflecting electrode 40. The nitrogen-containing layer 42 that isinsulative and has the second opening 42 h that communicates with thefirst opening 41 h is provided on the oxide layer 41.

The metal layer 50 also is provided. At least a portion of the metallayer 50 is provided inside the first opening 41 h and the secondopening 42 h. The metal layer 50 is electrically connected to thereflecting electrode 40 via the first opening 41 h and the secondopening 42 h.

The first semiconductor-layer side electrode 35 is provided on a portionof the first semiconductor layer 10 that does not oppose the lightemitting unit 30.

The semiconductor light emitting device 111 is a FC (Flip Chip)semiconductor light emitting device.

In the semiconductor light emitting device 111, for example, the surfacearea of the portion of the reflecting electrode 40 exposed at the firstopening 41 h and the second opening 42 h is less than the surface areaof the portion of the reflecting electrode 40 covered with the oxidelayer 41.

In the semiconductor light emitting device 111 as well, an electrodeformed using silver that has high performance and high reliability canbe realized.

Second Embodiment

FIG. 9 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to asecond embodiment. As illustrated in FIG. 9, the semiconductor lightemitting device 120 according to the embodiment also includes the firstsemiconductor layer 10, the light emitting unit 30, the secondsemiconductor layer 20, the reflecting electrode 40, the oxide layer 41,and the nitrogen-containing layer 42. The semiconductor light emittingdevice 120 further includes the metal layer 50, the support substrate60, and the bonding layer 61. The first semiconductor layer 10, thelight emitting unit 30, the second semiconductor layer 20, thereflecting electrode 40, the metal layer 50, the support substrate 60,and the bonding layer 61 may be similar to those of the semiconductorlight emitting device 110, and a description is omitted. Portions of thesemiconductor light emitting device 120 that differ from those of thesemiconductor light emitting device 110 will now be described.

In the semiconductor light emitting device 120, the oxide layer 41 isconductive; and the nitrogen-containing layer 42 also is conductive.Because the oxide layer 41 and the nitrogen-containing layer 42 areconductive, the first opening 41 h and the second opening 42 h may notbe provided in the semiconductor light emitting device 120. Even in thecase where the oxide layer 41 and the nitrogen-containing layer 42 areconductive, the first opening 41 h and the second opening 42 h may beprovided.

For example, the oxide layer 41 may include an oxide of at least oneselected from In, Zn, and Sn; and, for example, the oxide layer 41 mayinclude ITO (Indium Tin Oxide). For example, the nitrogen-containinglayer 42 includes an oxynitride of at least one selected from In, Zn,and Sn.

In such a case as well, a uniform and low contact resistance is obtainedby performing heat treatment in an oxygen atmosphere in the state inwhich the oxide layer 41 is formed on the reflecting electrode 40 (theAg layer). Then, the migration of the Ag is suppressed. By providing thenitrogen-containing layer 42 on the oxide layer 41, the migration due tothe penetration of water, the occurrence of sulfides, and the diffusionof other elements to the interface between the Ag layer and the p-typeGaN layer can be suppressed. In the semiconductor light emitting device120 as well, a semiconductor light emitting device including anelectrode formed using silver that has high performance and highreliability can be provided.

FIG. 10 is a schematic cross-sectional view illustrating theconfiguration of another semiconductor light emitting device accordingto the second embodiment.

The semiconductor light emitting device 121 according to the embodimentas illustrated in FIG. 10 also includes the first semiconductor layer10, the light emitting unit 30, the second semiconductor layer 20, thereflecting electrode 40, the oxide layer 41, and the nitrogen-containinglayer 42. The semiconductor light emitting device 121 is a FCsemiconductor light emitting device. In the semiconductor light emittingdevice 121, the oxide layer 41 and the nitrogen-containing layer 42 areconductive. Otherwise, the semiconductor light emitting device 121 issimilar to the semiconductor light emitting device 111; and adescription is therefore omitted. In the semiconductor light emittingdevice 121, the first opening 41 h and the second opening 42 h may ormay not be provided. In the semiconductor light emitting device 121 aswell, an electrode formed using silver that has high performance andhigh reliability can be realized.

Thus, the heat treatment is performed in an oxygen atmosphere to obtaina low contact resistance in the case where the Ag electrode is used.Although it is effective to perform the heat treatment after forming ametal film other than Ag on the Ag electrode to suppress the migrationof the Ag, it was learned that the light emission intensity decreases atthe central portion of the electrode, and the light emission isnonuniform. By such analysis, the inventor of the application discoveredthat although ohmic contact is obtained at the circumferential edgeportion of the electrode, ohmic contact cannot be obtained at thecentral portion of the electrode. It was also seen that the element of ametal film other than Ag formed on the Ag electrode segregates to theinterface between the Ag electrode and the p-type GaN layer. Thereby,problems were discovered in which the operating voltage Vf increases andthe luminous efficiency decreases.

Conversely, in the embodiment, an insulative or conductive oxide layer41 is formed on the Ag electrode instead of a metal film that diffuseseasily; and the heat treatment is performed in oxygen via the oxidelayer 41. Thereby, a uniform light emission distribution can beobtained. Also, the decrease of the reliability due to the penetrationof impurities from the outside is suppressed by further providing thenitrogen-containing layer 42 on the oxide layer 41.

According to the embodiment, a semiconductor light emitting deviceincluding an electrode formed using silver that has high performance andhigh reliability and a method for manufacturing the same are provided.

In the specification, “nitride semiconductor” includes all compositionsof semiconductors of the chemical formula B_(x)In_(y)Al_(z)Ga_(1-x-y-z)N(0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≦1) for which the compositionalproportions x, y, and z are changed within the ranges respectively.“Nitride semiconductor” further includes group V elements other than N(nitrogen) in the chemical formula recited above, various elements addedto control various properties such as the conductivity type and thelike, and various elements included unintentionally.

In the specification of the application, “perpendicular” and “parallel”refer to not only strictly perpendicular and strictly parallel but alsoinclude, for example, the fluctuation due to manufacturing processes,etc. It is sufficient to be substantially perpendicular andsubstantially parallel.

Hereinabove, exemplary embodiments of the invention are described withreference to specific examples. However, the embodiments of theinvention are not limited to these specific examples. For example, oneskilled in the art may similarly practice the invention by appropriatelyselecting specific configurations of components included insemiconductor light emitting devices such as first semiconductor layers,second semiconductor layers, light emitting units, well layers, barrierlayers, first intermediate layers, second intermediate layers,reflecting electrodes, oxide layers, nitrogen-containing layers, metallayers, support substrates, bonding layers, first semiconductor-layerside electrodes, crystal growth substrates, buffer layers, and the likefrom known art; and such practice is included in the scope of theinvention to the extent that similar effects are obtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all semiconductor light emitting devices and depositionmethods of methods for manufacturing semiconductor light emittingdevices practicable by an appropriate design modification by one skilledin the art based on the semiconductor light emitting devices and thedeposition methods of the methods for manufacturing semiconductor lightemitting devices described above as embodiments of the invention alsoare within the scope of the invention to the extent that the spirit ofthe invention is included.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

1-20. (canceled)
 21. A method for manufacturing a semiconductor lightemitting device, comprising: forming a reflecting electrode including Agon a second semiconductor layer of a stacked body, the stacked bodyincluding a first semiconductor layer of a first conductivity type, alight emitting unit provided on the first semiconductor layer, and thesecond semiconductor layer of a second conductivity type provided on thelight emitting unit; forming an oxide layer on the reflecting electrode;performing a heat treatment of a processing body including the stackedbody, the reflecting electrode, and the oxide layer in an atmosphereincluding oxygen; and forming a nitrogen-containing layer on the oxidelayer after performing the heat treatment.
 22. The method according toclaim 21, further comprising performing a pre-heat treatment on theprocessing body at reduced pressure or in a nitrogen atmosphere prior tothe heat treatment in the atmosphere including oxygen.
 23. The methodaccording to claim 21, further comprising making an opening in the oxidelayer and the nitrogen-containing layer to communicate with thereflecting electrode.
 24. The method according to claim 23, wherein: theoxide layer includes an oxide of at least one selected from Si, Ge, Ti,Zr, Hf, Ce, Y, and La; and a surface area of a first portion of thereflecting electrode is less than a surface area of a second portion ofthe reflecting electrode, the first portion of the reflecting electrodeoverlaps the opening of the oxide layer and the opening of thenitrogen-containing layer in a first direction from the oxide layertoward the nitrogen-containing layer, and the second portion of thereflecting electrode overlaps the oxide layer in the first direction.25. The method according to claim 23, wherein the nitrogen-containinglayer includes a nitride or an oxynitride of at least one selected fromSi, Ge, Ti, Zr, Hf, and Ce.
 26. The method according to claim 21,wherein the oxide layer includes an oxide of at least one selected fromIn, Zn, and Sn.
 27. The method according to claim 21, wherein thenitrogen-containing layer includes an oxynitride of at least oneselected from In, Zn, and Sn.
 28. The method according to claim 21,wherein the oxide layer includes an oxide of at least one selected fromSi, Ge, Ti, Zr, Hf, and Ce.
 29. The method according to claim 21,wherein the nitrogen-containing layer includes an oxynitride of at leastone selected from Si, Ge, Ti, Zr, Hf, and Ce.